Size control of InP nanowires by in situ annealing and its application to the formation of InAsP quantum dots

Sasaki, Masahiro; Akamatsu, Tomoya; Tomioka, Katsuhiro; Motohisa, Junichi

Size control of InP nanowires by in situ annealing and its application to the formation of InAsP quantum dots

Sasaki, Masahiro; Akamatsu, Tomoya; Tomioka, Katsuhiro et al.

Nanotechnology, 2024, 35(19), 195604

Permalink : https://hdl.handle.net/2115/94078

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アクセス権	open access
URI	https://hdl.handle.net/2115/94078
タイトル	Size control of InP nanowires by in situ annealing and its application to the formation of InAsP quantum dots
著者	Sasaki, Masahiro ; Akamatsu, Tomoya ; Tomioka, Katsuhiro ; Motohisa, Junichi
著者名 Sasaki, Masahiro
著者名 Akamatsu, Tomoya
e-Rad_Researcher 60519411 著者名 Tomioka, Katsuhiro
e-Rad_Researcher 60212263 著者名 Motohisa, Junichi
言語	英語
キーワード	nanowire
	InP
	quantum dot
	heterostructure
発行日	2024-02-20
出版者	IOP Publishing
収録物名	Nanotechnology
巻(号)	35(19)
ページ	195604
抄録	We carried out in situ annealing of InP nanowires (NWs) in a metal-organic vapor phase epitaxial (MOVPE) growth reactor to control and reduce the tip size of InP NWs. InP NWs were grown by selective-area (SA) MOVPE on partially masked (111)A InP substrates, and annealing was successively applied in tertiarybutylphosphine (TBP) ambient. Initially, the InP NWs had a hexagonal cross-section with {112} facets vertical to the substrates; they became tapered, and the edges were rounded by annealing. By appropriately selecting the annealing temperature and initial NW diameter, the tip size of the NW was reduced and NWs with a tip size of 20 nm were successfully formed. Subsequently, a thin InAsP layer was grown on the annealed NWs and their photoluminescence was investigated at low temperatures. The characterization results indicated the formation of InAsP quantum dots (QDs) emitting in the telecom band. Our approach is useful for reducing the size of the NWs and for the controlled formation of InAsP QDs embedded in InP NWs in photonic devices compatible with telecom bands.
資源タイプ	学術雑誌論文
出版タイプ	Accepted Manuscript
権利情報	This is the Accepted Manuscript version of an article accepted for publication in Nanotechnology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at http://doi.org/10.1088/1361-6528/ad2570.
PISSN	0957-4484
関連情報 (isVersionOf)	出版社版DOI https://doi.org/10.1088/1361-6528/ad2570