Characterization of nanowire light-emitting diodes with InP/InAsP heterostructures emitting in telecom band

Motohisa, Junichi; Tomoya, Akamatsu; Manami, Okamoto; Katsuhiro, Tomioka

Characterization of nanowire light-emitting diodes with InP/InAsP heterostructures emitting in telecom band

Motohisa, Junichi; Tomoya, Akamatsu; Manami, Okamoto et al.

Japanese Journal of Applied Physics (JJAP), 2024, 63(3), 03SP08

Permalink : https://hdl.handle.net/2115/94200

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論文情報

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アクセス権	open access
URI	https://hdl.handle.net/2115/94200
タイトル	Characterization of nanowire light-emitting diodes with InP/InAsP heterostructures emitting in telecom band
著者	Motohisa, Junichi ; Tomoya, Akamatsu ; Manami, Okamoto ; Katsuhiro, Tomioka
e-Rad_Researcher 60212263 著者名 Motohisa, Junichi
著者名 Tomoya, Akamatsu
著者名 Manami, Okamoto
e-Rad_Researcher 60519411 著者名 Katsuhiro, Tomioka
言語	英語
キーワード	nanowire
	light-emitting diode
	quantum dot
	single photon source
発行日	2024-02-08
出版者	IOP Publishing
収録物名	Japanese Journal of Applied Physics (JJAP)
巻(号)	63(3)
ページ	03SP08
抄録	We report the growth and characterization of InP/InAsP/InP nanowires (NWs) and NW LEDs (NW-LEDs), which emit light at telecom wavelengths. InP-based NWs were grown by selective-area metal-organic vapor-phase epitaxy, and a thin InAsP layer was embedded in the NWs. The NW exhibited emission lines in their low-temperature photoluminescence spectra, suggesting the formation of quantum dots (QDs) in the NW. NW-LED operation was demonstrated at both room and low temperatures in the telecom band, but it was found that the emission wavelength range and blueshift behavior induced by current injection differed considerably between room and low temperatures. Our results suggest that an efficient path for carrier injection into the active InAsP layer should be explored for NW-QD-based single-photon sources operating via current-injection.
資源タイプ	学術雑誌論文
出版タイプ	Accepted Manuscript
権利情報	Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International
権利情報	This is the Accepted Manuscript version of an article accepted for publication in Japanese Journal of Applied Physics(JJAP). IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.35848/1347-4065/ad202f.
権利情報	© 2024 The Japan Society of Applied Physics
PISSN	0021-4922
関連情報 (isVersionOf)	出版社版DOI https://doi.org/10.35848/1347-4065/ad202f