High-mobility and high-reliability Zn-incorporated amorphous In2O3-based thin-film transistors

Wu, Yuzhang; Magari, Yusaku; Ghediya, Prashant R.; Zhang, Yuqiao; Matsuo, Yasutaka; Ohta, Hiromichi

High-mobility and high-reliability Zn-incorporated amorphous In2O3-based thin-film transistors

Wu, Yuzhang; Magari, Yusaku; Ghediya, Prashant R. et al.

Japanese Journal of Applied Physics (JJAP), 2024, 63(7), 076504

Permalink : https://hdl.handle.net/2115/95771

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アクセス権	open access
URI	https://hdl.handle.net/2115/95771
タイトル	High-mobility and high-reliability Zn-incorporated amorphous In2O3-based thin-film transistors
著者	Wu, Yuzhang ; Magari, Yusaku ; Ghediya, Prashant R. ; Zhang, Yuqiao ; Matsuo, Yasutaka ; Ohta, Hiromichi
著者名 Wu, Yuzhang
e-Rad_Researcher 20874887 著者名 Magari, Yusaku
著者名 Ghediya, Prashant R.
著者名 Zhang, Yuqiao
e-Rad_Researcher 90374652 著者名 Matsuo, Yasutaka
e-Rad_Researcher 80372530 著者名 Ohta, Hiromichi
言語	英語
キーワード	IZO-TFTs
	polycrystal
	amorphous
	field-effect mobility
	reliability
発行日	2024-07-25
出版者	IOP Publishing
収録物名	Japanese Journal of Applied Physics (JJAP)
巻(号)	63(7)
ページ	076504
抄録	Polycrystalline indium oxide-based thin film transistors (In2O3 TFTs) have attracted considerable attention because of high field effect mobility (mu(FE) similar to 100 cm(2) V-1 s(-1)). However, In2O3 TFTs exhibit poor reliability owing to the adsorption and/or desorption of gas molecules at the grain boundaries. The incorporation of Zn suppresses the crystallization of In2O3. Herein, we systematically studied the effect of Zn incorporation into In2O3 TFTs. The crystallization of In(2)O(3 )was suppressed when the Zn concentration ranged from 25% to 68%. Amorphous InZnO (IZO) TFTs with 25% Zn exhibited the highest mu(FE) of 41 cm(2) V-1 s(-1) and excellent reliability. In contrast, polycrystalline IZO TFTs showed a low mu(FE) <12 cm(2 )V(-1 )s(-1) due to the formation of grain boundaries, and poor reliability after positive gate bias, mostly due to electron trapping at the polycrystalline/insulator interface. These results render an approach to realize In2O3 TFTs that show reasonably high mu(FE) and excellent reliability.
資源タイプ	学術雑誌論文
出版タイプ	Accepted Manuscript
権利情報	Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International
権利情報	This is the Accepted Manuscript version of an article accepted for publication in Japanese Journal of Applied Physics(JJAP). IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.35848/1347-4065/ad5ee6.
権利情報	© 2024 The Japan Society of Applied Physics
PISSN	0021-4922
関連情報 (isVersionOf)	出版社版DOI https://doi.org/10.35848/1347-4065/ad5ee6