Effects of SiO2 cap annealing at 800℃ on Ga-polar n-type and p-type GaN (0001) surfaces compared by X-ray photoelectron spectroscopy

Takahashi, Masanobu; Jiao, Yining; Akazawa, Masamichi

Effects of SiO2 cap annealing at 800℃ on Ga-polar n-type and p-type GaN (0001) surfaces compared by X-ray photoelectron spectroscopy

Takahashi, Masanobu; Jiao, Yining; Akazawa, Masamichi

Japanese Journal of Applied Physics, 2024, 63(11), 110905

Permalink : https://hdl.handle.net/2115/97319

このアイテムのアクセス数:67件（2026-10-13 07:29 集計）

閲覧可能ファイル

ファイル	フォーマット	サイズ	閲覧回数	説明
JJAP-RC_Takahashi	pdf	577 KB	93

論文情報

ファイル出力 EndNote Basic出力 Mendeley出力

アクセス権	open access
URI	https://hdl.handle.net/2115/97319
タイトル	Effects of SiO2 cap annealing at 800℃ on Ga-polar n-type and p-type GaN (0001) surfaces compared by X-ray photoelectron spectroscopy
著者	Takahashi, Masanobu ; Jiao, Yining ; Akazawa, Masamichi
著者名 Takahashi, Masanobu
著者名 Jiao, Yining
e-Rad_Researcher 30212400 著者名 Akazawa, Masamichi
言語	英語
キーワード	GaN MOS
	defects
	interface states
	native oxide
	band bending
発行日	2024-11-27
出版者	IOP Publishing
収録物名	Japanese Journal of Applied Physics
巻(号)	63(11)
ページ	110905
抄録	The effects of SiO2 cap annealing at 800 degrees C on Ga-polar n-type and p-type GaN (0001) surfaces were compared by X-ray photoelectron spectroscopy. We found that the native oxide thickness at the GaN surfaces is usually at the monolayer level regardless of the process step, except immediately after SiO2 cap annealing for p-type GaN. Furthermore, for both conduction types, the surface Fermi level is located between the conduction band edge and the charge neutrality level regardless of the process step, which indicated that donor-like defects existed in the vicinity of the p-type GaN surfaces.
資源タイプ	学術雑誌論文
出版タイプ	Accepted Manuscript
権利情報	Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International
権利情報	© 2024 The Japan Society of Applied Physics
権利情報	This is the Accepted Manuscript version of an article accepted for publication in Japanese Journal of Applied Physics(JJAP). IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.35848/1347-4065/ad9189.
PISSN	0021-4922
関連情報 (isVersionOf)	出版社版DOI https://doi.org/10.35848/1347-4065/ad9189