open access

https://hdl.handle.net/2115/97366

Thermopower modulation analyses of effective channel thickness for Zn-incorporated In2O3-based thin-film transistors

英語

electric field thermopower modulation analysis

2024-12-16

IOP Publishing

Japanese Journal of Applied Physics

63(12)

126501

Zn-incorporated In2O3 (IZO) thin-film transistors (TFTs) show high field-effect mobility (mu FE similar to 40 cm(2) V-1 s(-1)) when the IZO channel is amorphous, whereas a lower mu FE (similar to 10 cm(2) V-1 s(-1)) is observed with a polycrystalline channel. The reasons behind this difference in mu(FE) remain unclear despite various studies on IZO TFTs. Here, we perform electric field thermopower modulation analysis on amorphous and polycrystalline IZO TFTs to measure the change in effective thickness. For the amorphous channel, the effective thickness was zero when the effective gate voltage (V-g-V-th; V-g is the gate voltage and Vth is the threshold voltage) was zero. Furthermore, it gradually increased with V-g-V-th up to 1.6 nm, reflecting that conduction band bending occurred. By contrast, the polycrystalline channel showed an initial effective thickness of 5 nm (approximate to film thickness of IZO) and sharply decreased to similar to 1.7 nm. In amorphous channels, electron transport followed field-effect theory, while factors like grain boundaries limited transport in polycrystalline channels. (c) 2024 The Japan Society of Applied Physics. All rights, including for text and data mining, AI training, and similar technologies, are reserved.

学術雑誌論文

Accepted Manuscript

Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International

This is the Accepted Manuscript version of an article accepted for publication in Japanese Journal of Applied Physics(JJAP). IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.35848/1347-4065/ad971b

0021-4922