Efficient room-temperature spin-amplified luminescence of an InAs quantum dot tunnel coupled with a thin GaNAs spin filter

Hiura, Satoshi; Sato, Shino; Sakano, Shunsuke; Takayama, Junichi; Murayama, Akihiro

Efficient room-temperature spin-amplified luminescence of an InAs quantum dot tunnel coupled with a thin GaNAs spin filter

Hiura, Satoshi; Sato, Shino; Sakano, Shunsuke et al.

Applied physics letters, 2025, 126(5), 052403

Permalink : https://hdl.handle.net/2115/97437

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アクセス権	open access
URI	https://hdl.handle.net/2115/97437
タイトル	Efficient room-temperature spin-amplified luminescence of an InAs quantum dot tunnel coupled with a thin GaNAs spin filter
著者	Hiura, Satoshi ; Sato, Shino ; Sakano, Shunsuke ; Takayama, Junichi ; Murayama, Akihiro
著者名 Hiura, Satoshi
著者名 Sato, Shino
著者名 Sakano, Shunsuke
著者名 Takayama, Junichi
著者名 Murayama, Akihiro
言語	英語
キーワード	Spintronics
	Electronic band structure
	Quantum dots
	Semiconductor materials
	Time-resolved photoluminescence
	Photoluminescence spectroscopy
	Electron capture
	Polarization
	Quantum wells
発行日	2025-02-03
出版者	AIP Publishing
収録物名	Applied physics letters
巻(号)	126(5)
ページ	052403
抄録	Dilute nitride GaNAs has attracted much attention for spin generation owing to its defect-engineered spin filtering at room temperature. Strong, circularly polarized luminescence reflecting the spin-polarized electron states generated by a GaNAs spin filter is needed to realize practical opto-spintronics applications. This study examined the impacts of the GaNAs thickness on the room-temperature spin-polarized luminescence properties of tunnel-coupled InAs quantum dots (QDs) through polarization- and time-resolved photoluminescence in combination with a rate equation analysis. Reducing the GaNAs thickness from 20 to 5 nm increased the QD luminescence intensity by over an order of magnitude at low excitation powers. This increased luminescence was attributed to decreased electron capture in the deep-level defect states of GaNAs, which resulted from fewer defects in thinner GaNAs layers. Furthermore, the reduction in GaNAs thickness decreased the excitation power needed to maximize electron spin polarization of QDs while maintaining a near-maximum value. This efficient spin-amplified luminescence of QDs was achieved through spin-selective capture of QD electrons by defect states under low excitation spin densities. These results demonstrate that using a thin GaNAs spin filter can result in strong QD luminescence and high circular polarization at room temperature and low excitation spin densities. The findings give valuable implications for the development of spin-functional optical devices utilizing a GaNAs spin filter.
資源タイプ	学術雑誌論文
出版タイプ	Version of Record
権利情報	This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Satoshi Hiura, Shino Sato, Shunsuke Sakano, Junichi Takayama, Akihiro Murayama; Efficient room-temperature spin-amplified luminescence of an InAs quantum dot tunnel coupled with a thin GaNAs spin filter. Appl. Phys. Lett. 3 February 2025; 126 (5): 052403 and may be found at https://doi.org/10.1063/5.0249606.
PISSN	0003-6951
関連情報 (isIdenticalTo)	出版社版DOI https://doi.org/10.1063/5.0249606