Detection of charge transition level of near-surface hydrogen interstitials introduced into Mg-ion-implanted GaN by annealing

Hatakeyama, Yuki; Narita, Tetsuo; Kachi, Tetsu; Akazawa, Masamichi

Detection of charge transition level of near-surface hydrogen interstitials introduced into Mg-ion-implanted GaN by annealing

Hatakeyama, Yuki; Narita, Tetsuo; Kachi, Tetsu et al.

Japanese Journal of Applied Physics, 2025, 64(9), 090905

Permalink : https://hdl.handle.net/2115/98154

このアイテムのアクセス数:20件（2026-10-17 12:14 集計）

閲覧可能ファイル

ファイル	フォーマット	サイズ	閲覧回数	説明
JJAP_Hatakeyama_final	pdf	718 KB	17

論文情報

ファイル出力 EndNote Basic出力 Mendeley出力

アクセス権	open access
URI	https://hdl.handle.net/2115/98154
タイトル	Detection of charge transition level of near-surface hydrogen interstitials introduced into Mg-ion-implanted GaN by annealing
著者	Hatakeyama, Yuki ; Narita, Tetsuo ; Kachi, Tetsu ; Akazawa, Masamichi
著者名 Hatakeyama, Yuki
著者名 Narita, Tetsuo
著者名 Kachi, Tetsu
e-Rad_Researcher 30212400 著者名 Akazawa, Masamichi
言語	英語
発行日	2025-09-24
出版者	IOP Publishing
収録物名	Japanese Journal of Applied Physics
巻(号)	64(9)
ページ	090905
抄録	Excellent properties were obtained for metal-oxide-semiconductor structures fabricated on n-type GaN after light Mg-ion implantation and subsequent ultrahigh-pressure annealing. However, a small bump caused by near-surface defects was detected in capacitance-voltage (C-V) characteristics. Nevertheless, conventional C-V methods for evaluating interface states cannot evaluate the charge transition of near-surface defect states. By analyzing the plot of dC/dV versus the surface Fermi level, we detected bulk defect states at 0.5 eV below the conduction band edge with the (+/-) charge transition. The defects were assigned to hydrogen interstitials.
資源タイプ	学術雑誌論文
出版タイプ	Accepted Manuscript
権利情報	Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International
権利情報	This is the Accepted Manuscript version of an article accepted for publication in Japanese Journal of Applied Physics(JJAP). IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.35848/1347-4065/ae0630.
権利情報	© 2025 The Japan Society of Applied Physics
PISSN	0021-4922
関連情報 (isVersionOf)	出版社版DOI https://doi.org/10.35848/1347-4065/ae0630