Effects of Cl2-Based Inductively Coupled Plasma Etching of AlGaN on Interface Properties of Al2O3/AlGaN/GaN Heterostructures

Yatabe, Zenji; Hori, Yujin; Kim, Sungsik et al.

Applied Physics Express, 2012, 6(1), 016502-1-016502-4

Permalink : https://hdl.handle.net/2115/98834

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アクセス権	open access
URI	https://hdl.handle.net/2115/98834
タイトル	Effects of Cl2-Based Inductively Coupled Plasma Etching of AlGaN on Interface Properties of Al2O3/AlGaN/GaN Heterostructures
著者	Yatabe, Zenji ; Hori, Yujin ; Kim, Sungsik ; Hashizume, Tamotsu
著者名 Yatabe, Zenji
著者名 Hori, Yujin
著者名 Kim, Sungsik
著者名 Hashizume, Tamotsu
言語	英語
発行日	2012-12-18
出版者	IOP Publishing
収録物名	Applied Physics Express
巻(号)	6(1)
ページ	016502-1-016502-4
ページ数	4
抄録	The effects of the inductively coupled plasma (ICP) etching of AlGaN on the interface properties of the Al2O3/AlGaN/GaN structures prepared by atomic layer deposition were investigated. It was found from the photoassisted capacitance–voltage (C–V) results that the ICP etching of the AlGaN surface significantly increased the interface state density up to 8 1012 cm2 eV 1 at the Al2O3/AlGaN interface. The transmission electron microscopy and X-ray photoelectron spectroscopy analyses indicated that the monolayer-level roughness, disorder of the chemical bonds at the AlGaN surface caused poor C–V characteristics due to high-density interface states at the Al2O3/ICP-etched AGaN interface.
資源タイプ	学術雑誌論文
出版タイプ	Accepted Manuscript
権利情報	© 2013 The Japan Society of Applied Physics
PISSN	1882-0778
EISSN	1882-0786
関連情報 (isVersionOf)	出版社版DOI https://doi.org/10.7567/apex.6.016502