Properties of a GaAs Single Electron Path Switching Node Device Using a Single Quantum Dot for Hexagonal BDD Quantum Circuits

Nakamura, Tatsuya; Abe, Yuji; Kasai, Seiya et al.

Journal of Physics: Conference Series, 2006, 38, 104-107

Permalink : https://hdl.handle.net/2115/10195

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アクセス権
open access
URI
https://hdl.handle.net/2115/10195
タイトル
Properties of a GaAs Single Electron Path Switching Node Device Using a Single Quantum Dot for Hexagonal BDD Quantum Circuits
著者
Nakamura, Tatsuya ; Abe, Yuji ; Kasai, Seiya ; Hasegawa, Hideki ; Hashizume, Tamotsu
著者名
Nakamura, Tatsuya
著者名
Abe, Yuji
e-Rad_Researcher
30312383
著者名
Kasai, Seiya
著者名
Hasegawa, Hideki
著者名
Hashizume, Tamotsu
言語
英語
発行日
2006
出版者
Institute of Physics
収録物名
Journal of Physics: Conference Series
巻(号)
38
ページ
104-107
記述
THE SEVENTH INTERNATIONAL CONFERENCE ON NEW PHENOMENA IN MESOSCOPIC STRUCTURES & THE FIFTH INTERNATIONAL CONFERENCE ON SURFACES AND INTERFACES OF MESOSCOPIC DEVICES (27 November--2 December 2005, Maui, Hawaii, USA)
抄録
A new single electron (SE) binary-decision diagram (BDD) node device having a single quantum dot connected to three nanowire branches through tunnel barriers was fabricated using etched AlGaAs/GaAs nanowires and nanometer-sized Schottky wrap gates(WPGs), and their operation was characterized experimentally, for the hexagonal BDD quantum circuit. Fabricated devices showed clear and steep single electron pass switching by applying only an input voltage signal, which was completely different from switching properties in the previous SE BDD node devices composed of two single electron switches. As the possible switching mechanism, the correlation between the probabilities of tunnelling thorough a single quantum dot in exit branches was discussed.
資源タイプ
学術雑誌論文
出版タイプ
Accepted Manuscript
PISSN
1742-6588
EISSN
1742-6596
関連情報 (isVersionOf)
出版社版DOI
https://doi.org/10.1088/1742-6596/38/1/026