Laser spot scanning in photoelectrochemical systems, relation between spot size and spatial resolution of the photocurrent

Eriksson, S.; Carlsson, P.; Holmström, B.; Uosaki, K.

Laser spot scanning in photoelectrochemical systems, relation between spot size and spatial resolution of the photocurrent

Eriksson, S.; Carlsson, P.; Holmström, B. et al.

Journal of Applied Physics, 1991, 69(4), 2324-2327

Permalink : https://hdl.handle.net/2115/20578

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アクセス権	open access
URI	https://hdl.handle.net/2115/20578
タイトル	Laser spot scanning in photoelectrochemical systems, relation between spot size and spatial resolution of the photocurrent
著者	Eriksson, S. ; Carlsson, P. ; Holmström, B. ; Uosaki, K.
著者名 Eriksson, S.
著者名 Carlsson, P.
著者名 Holmström, B.
著者名 Uosaki, K.
言語	英語
発行日	1991-02-15
出版者	American Institute of Physics
収録物名	Journal of Applied Physics
巻(号)	69(4)
ページ	2324-2327
抄録	Laser spot scanning studies of single-crystalline p-InSe in contact with a neutral aqueous solution reveal a dramatic difference in lateral resolution between the material ``as cleaved'' and after platinization by brief dipping in a dilute H2PtCl6 solution. A model is developed to explain these observations, and the resolution is calculated as a function of the diffusion coefficient and the life time of minority carriers, and of the charge transfer rate. The improvement of the resolution is found to be due to the increase of the rate of hydrogen evolution at the illuminated semiconductor by Pt catalyst. The model also provides numerical values for the charge transfer rate in the noncatalyzed and the catalyzed cases. Journal of Applied Physics is copyrighted by The American Institute of Physics.
資源タイプ	学術雑誌論文
出版タイプ	Version of Record
権利情報	Copyright © 1991 American Institute of Physics
PISSN	0021-8979
関連情報 (isIdenticalTo)	出版社版DOI https://doi.org/10.1063/1.348714