Multipath-switching device utilizing a GaAs-based multiterminal nanowire junction with size-controlled dual Schottky wrap gates

Kasai, Seiya; Nakamura, Tatsuya; Shiratori, Yuta

Applied Physics Letters, 2007, 90(20), 203504

Permalink : https://hdl.handle.net/2115/20585

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アクセス権	open access
URI	https://hdl.handle.net/2115/20585
タイトル	Multipath-switching device utilizing a GaAs-based multiterminal nanowire junction with size-controlled dual Schottky wrap gates
著者	Kasai, Seiya ; Nakamura, Tatsuya ; Shiratori, Yuta
e-Rad_Researcher 30312383 著者名 Kasai, Seiya
著者名 Nakamura, Tatsuya
著者名 Shiratori, Yuta
言語	英語
発行日	2007-05-14
出版者	American Institute of Physics
収録物名	Applied Physics Letters
巻(号)	90(20)
ページ	203504
抄録	A multipath-switching device using a multiterminal nanowire junction with size-controlled dual gates is proposed and demonstrated experimentally. The device switches a number of output terminals according to multiple-valued input voltages for electrons entering from a root terminal. The switching function is implemented by dual gating on multiple nanowires with different threshold voltages Vth. Systematic Vth shift is made by changing gate lengths in nanometer scale. A triple-path-switching device is fabricated using AlGaAs/GaAs etched nanowires and nanometer-scale Schottky wrap gates. Its correct operation is confirmed at room temperature. Obtained results are explained by a simple analytical model.
資源タイプ	学術雑誌論文
出版タイプ	Version of Record
権利情報	Copyright © 2007 American Institute of Physics
PISSN	0003-6951
EISSN	0003-6951
関連情報 (isIdenticalTo)	出版社版DOI https://doi.org/10.1063/1.2739085