Datta-Das-type spin-field-effect transistor in the nonballistic regime

Ohno, Munekazu; Yoh, Kanji

Physical Review. B, 2008, 77(4), 045323

Permalink : https://hdl.handle.net/2115/32885

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アクセス権	open access
URI	https://hdl.handle.net/2115/32885
タイトル	Datta-Das-type spin-field-effect transistor in the nonballistic regime
著者	e-Rad_Researcher 30431331 著者名 Ohno, Munekazu
著者	著者名 Yoh, Kanji
言語	英語
発行日	2008-01-22
出版者	American Physical Society
収録物名	Physical Review. B
巻(号)	77(4)
ページ	045323
抄録	We analyzed the applicability of original Datta-Das proposal for spin-field-effect transistor (spin-FET) to nonballistic regime based on semiempirical Monte Carlo simulation for spin transport. It is demonstrated that the spin helix state in two-dimensional electron gas system is sufficiently robust against D'yakonov-Perel' spin relaxation to allow an operation of Datta-Das-type spin-FET in the nonballistic transport regime. It is also shown that the spin diffusion length of the spin helix state can be increased with an in-plane electrical field along the [110] direction. In marked contrast to early proposals for nonballistic spin-FETs, the “on” and “off” states are characterized by a 180° phase difference in the spin precession motions, which is highly advantageous in terms of device flexibility.
資源タイプ	学術雑誌論文
出版タイプ	Version of Record
権利情報	(c) 2008 American Physical Society
PISSN	1098-0121
EISSN	1550-235X
関連情報	URI http://www.aps.org/
関連情報 (isIdenticalTo)	出版社版DOI https://doi.org/10.1103/PhysRevB.77.045323