Role of Nitrogen Precursor Supplies on InAs Quantum Dot Surfaces in Their Emission Wavelengths

Suemune, Ikuo; Sasikala, Ganapathy; Kumano, Hidekazu; Uesugi, Katsuhiro; Nabetani, Yoichi; Matsumoto, Takashi; Maeng, J.-T.; Seong, Tae Yeon

Role of Nitrogen Precursor Supplies on InAs Quantum Dot Surfaces in Their Emission Wavelengths

Suemune, Ikuo; Sasikala, Ganapathy; Kumano, Hidekazu et al.

Japanese Journal of Applied Physics, 2006, 45(no. 21), L529-L532

Permalink : https://hdl.handle.net/2115/33910

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アクセス権	open access
URI	https://hdl.handle.net/2115/33910
タイトル	Role of Nitrogen Precursor Supplies on InAs Quantum Dot Surfaces in Their Emission Wavelengths
著者	Suemune, Ikuo ; Sasikala, Ganapathy ; Kumano, Hidekazu ; Uesugi, Katsuhiro ; Nabetani, Yoichi ; Matsumoto, Takashi ; Maeng, J.-T. ; Seong, Tae Yeon
e-Rad_Researcher 00112178 著者名 Suemune, Ikuo
著者名 Sasikala, Ganapathy
e-Rad_Researcher 70292042 著者名 Kumano, Hidekazu
e-Rad_Researcher 70261352 著者名 Uesugi, Katsuhiro
著者名 Nabetani, Yoichi
著者名 Matsumoto, Takashi
著者名 Maeng, J.-T.
著者名 Seong, Tae Yeon
言語	英語
キーワード	quantum dot
	nitrogen
	monomethylhydrazine
	InAs
	nitridation
発行日	2006
出版者	Japan Society of Applied Physics
収録物名	Japanese Journal of Applied Physics
巻(号)	45(no. 21)
ページ	L529-L532
抄録	The role of nitrogen (N) in emission wavelengths from InAs quantum dots (QDs) was studied with intentional supplies of a N precursor (monomethylhydrazine) to InAs dot surfaces just before burying them with GaAs capping layers by metalorganic molecular-beam epitaxy. Luminescence from the InAs QDs showed a red shift with the N-precursor supplies on the dot surfaces, and more clear separations of the luminescence sub peaks originating from QD excited-state transitions were observed. The increase in the N precursor supplies on the dot surfaces however changed the relative variation in the emission wavelengths from the red shift to the blue shift. Additional observations of the dot sizes as well as the model calculations of the emission peaks and of the energy separations of the lowest and QD excited-state transitions showed that the red shift is due to the reduced Ga inclusion in the InAs QDs and that the blue shift is due to the reduced dot sizes.
資源タイプ	学術雑誌論文
出版タイプ	Accepted Manuscript
PISSN	0021-4922
EISSN	1347-4065
関連情報 (isVersionOf)	出版社版DOI https://doi.org/10.1143/JJAP.45.L529