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https://hdl.handle.net/2115/45385

Al0.44Ga0.56N spacer layer to prevent electron accumulation inside barriers in lattice-matched InAlN/AlGaN/AlN/GaN heterostructures

英語

2011-04-04

American Institute of Physics

Applied Physics Letters

98(14)

142117

The barrier structure in lattice-matched InAlN/GaN heterostructures with AlGaN-based spacer layers grown by metal organic vapor phase epitaxy was studied by the capacitance-voltage (C-V) method. To investigate the characteristics under positive bias, an Al2O3 overlayer was added. The C-V characteristic of a sample with an Al0.38Ga0.62N (5 nm)/AlN (0.75 nm) double spacer layer exhibited an anomalous saturation at a value far below the insulator capacitance under positive bias, which indicated electron accumulation at the InAlN/AlGaN interface. The C-V characteristic of an alternative sample with a single Al0.44Ga0.56N (1.5 nm) spacer layer did not exhibit the anomalous saturation.

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Copyright 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 98, 142117 and may be found at https://dx.doi.org/10.1063/1.3578449

0003-6951