Suppression of in-plane tunneling anisotropic magnetoresistance effect in Co2MnSi/MgO/n-GaAs and CoFe/MgO/n-GaAs junctions by inserting a MgO barrier

Akiho, Takafumi; Uemura, Tetsuya; Harada, Masanobu; Matsuda, Ken-ichi; Yamamoto, Masafumi

Suppression of in-plane tunneling anisotropic magnetoresistance effect in Co2MnSi/MgO/n-GaAs and CoFe/MgO/n-GaAs junctions by inserting a MgO barrier

Akiho, Takafumi; Uemura, Tetsuya; Harada, Masanobu et al.

Applied Physics Letters, 2011, 98(23), 232109

Permalink : https://hdl.handle.net/2115/46768

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アクセス権	open access
URI	https://hdl.handle.net/2115/46768
タイトル	Suppression of in-plane tunneling anisotropic magnetoresistance effect in Co2MnSi/MgO/n-GaAs and CoFe/MgO/n-GaAs junctions by inserting a MgO barrier
著者	Akiho, Takafumi ; Uemura, Tetsuya ; Harada, Masanobu ; Matsuda, Ken-ichi ; Yamamoto, Masafumi
著者名 Akiho, Takafumi
著者名 Uemura, Tetsuya
著者名 Harada, Masanobu
著者名 Matsuda, Ken-ichi
著者名 Yamamoto, Masafumi
言語	英語
キーワード	cobalt alloys
	cobalt compounds
	Fermi level
	gallium arsenide
	III-V semiconductors
	iron alloys
	magnesium compounds
	manganese compounds
	Schottky barriers
	spin valves
	tunnelling magnetoresistance
発行日	2011-06-06
出版者	American Institute of Physics
収録物名	Applied Physics Letters
巻(号)	98(23)
ページ	232109
抄録	The effects of MgO tunnel barriers on both junction resistance and tunneling anisotropic magnetoresistance (TAMR) characteristics of Co2MnSi(CMS)/MgO/n-GaAs junctions and Co50Fe50(CoFe)/MgO/n-GaAs junctions were investigated. The resistance-area (RA) product of the CMS/MgO/n-GaAs junctions showed an exponential dependence on MgO thickness (t_[MgO]), indicating that the MgO layer acts as a tunneling barrier. The RA product of CMS/MgO/n-GaAs with t_[MgO] < 1 nm was smaller than that of the sample without MgO. The observed spin-valvelike magnetoresistance of CMS/n-GaAs and CoFe/n-GaAs Schottky tunnel junctions attributed to the TAMR effect did not appear in the cases of CMS/MgO/n-GaAs and CoFe/MgO/n-GaAs tunnel junctions. The lowering of the RA product and the suppression of the TAMR effect caused by inserting a thin MgO layer between CMS and n-GaAs were both possibly due to suppression of the Fermi-level pinning of GaAs and lowering of the Schottky barrier height.
資源タイプ	学術雑誌論文
出版タイプ	Version of Record
権利情報	Copyright 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 98, 232109 (2011) and may be found at https://dx.doi.org/10.1063/1.3595311
PISSN	0003-6951
関連情報 (isIdenticalTo)	出版社版DOI https://doi.org/10.1063/1.3595311