Non-local detection of spin-polarized electrons at room temperature in Co50Fe50/GaAs Schottky tunnel junctions

Uemura, Tetsuya; Akiho, Takafumi; Harada, Masanobu; Matsuda, Ken-ichi; Yamamoto, Masafumi

Non-local detection of spin-polarized electrons at room temperature in Co50Fe50/GaAs Schottky tunnel junctions

Uemura, Tetsuya; Akiho, Takafumi; Harada, Masanobu et al.

Applied Physics Letters, 2011, 99(8), 082108

Permalink : https://hdl.handle.net/2115/47133

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アクセス権	open access
URI	https://hdl.handle.net/2115/47133
タイトル	Non-local detection of spin-polarized electrons at room temperature in Co50Fe50/GaAs Schottky tunnel junctions
著者	Uemura, Tetsuya ; Akiho, Takafumi ; Harada, Masanobu ; Matsuda, Ken-ichi ; Yamamoto, Masafumi
e-Rad_Researcher 20344476 著者名 Uemura, Tetsuya
著者名 Akiho, Takafumi
著者名 Harada, Masanobu
著者名 Matsuda, Ken-ichi
著者名 Yamamoto, Masafumi
言語	英語
キーワード	cobalt alloys
	gallium arsenide
	Hanle effect
	III-V semiconductors
	iron alloys
	Schottky barriers
	semiconductor-metal boundaries
	spin polarised transport
	spin valves
発行日	2011-08-22
出版者	American Institute of Physics
収録物名	Applied Physics Letters
巻(号)	99(8)
ページ	082108
抄録	A clear spin-valve signal and a Hanle signal were observed in a Co50Fe50/n-GaAs Schottky tunnel junction through a four-terminal non-local geometry. The sign and magnitude of the spin-valve signal were strongly dependent on the bias current, suggesting that the spin polarization at the Co50Fe50/n-GaAs interface had strong energy dependence. A clear spin-valve signal was observed at temperatures up to 290 K. The magnitude of the spin-valve signal monotonically decreased by a factor of 7.9 as the temperature increased from 10 K to 290 K; this factor was significantly smaller than the factors reported for Fe/n-GaAs junctions which range from 35 to 80.
資源タイプ	学術雑誌論文
出版タイプ	Version of Record
権利情報	Copyright 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 99, 082108 (2011) and may be found at https://dx.doi.org/10.1063/1.3630032
PISSN	0003-6951
関連情報 (isIdenticalTo)	出版社版DOI https://doi.org/10.1063/1.3630032