Programmable nano-switch array using SiN/GaAs interface traps on a GaAs nanowire network for reconfigurable BDD logic circuits

Shiratori, Yuta; Miura, Kensuke; Kasai, Seiya

Microelectronic Engineering, 2011, 88(8), 2755-2758

Permalink : https://hdl.handle.net/2115/47136

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アクセス権	open access
URI	https://hdl.handle.net/2115/47136
タイトル	Programmable nano-switch array using SiN/GaAs interface traps on a GaAs nanowire network for reconfigurable BDD logic circuits
著者	Shiratori, Yuta ; Miura, Kensuke ; Kasai, Seiya
著者名 Shiratori, Yuta
著者名 Miura, Kensuke
e-Rad_Researcher 30312383 著者名 Kasai, Seiya
言語	英語
キーワード	GaAs nanowire network
	Reconfigurable circuit
	Binary-decision-diagram
	Programmable switch
発行日	2011-08
出版者	Elsevier B.V.
収録物名	Microelectronic Engineering
巻(号)	88(8)
ページ	2755-2758
抄録	Programmable nano-switch arrays on GaAs-based nanowire networks are investigated for a reconfigurable binary-decision-diagram (BDD) logic circuit. A programmable switch was simply realized by inserting a SiNx thin layer between a metal gate and a nanowire. Fabricated switches were characterized in terms of hysteresis curve, program time dependences of off-state retention time, and on-state current. HCl treatment on SiNx prior to metal gate formation was found to remarkably improve the switching characteristics. We experimentally demonstrated correct and stable operation of a four-input reconfigurable BDD circuit integrating the switch array with HCl treatment.
資源タイプ	学術雑誌論文
出版タイプ	Accepted Manuscript
PISSN	0167-9317
関連情報 (isVersionOf)	出版社版DOI https://doi.org/10.1016/j.mee.2010.12.007