Phonon Effects on Electric and Thermal Properties in a Single Electron Transistor

Nishiguchi, Norihiko; Wybourne, Martin N.

Chinese Journal of Physics, 2011, 49(1), 221-230

Permalink : https://hdl.handle.net/2115/48263

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CJP2011_49_1	pdf	2.08 MB	693

アクセス権	open access
URI	https://hdl.handle.net/2115/48263
タイトル	Phonon Effects on Electric and Thermal Properties in a Single Electron Transistor
著者	e-Rad_Researcher 40175518 著者名 Nishiguchi, Norihiko
著者	著者名 Wybourne, Martin N.
言語	英語
発行日	2011-02
出版者	The Physicsal Society of Republic of China
収録物名	Chinese Journal of Physics
巻(号)	49(1)
ページ	221-230
抄録	We investigate the effects on the transport characteristics of a single electron transistor caused by dynamic deformations of the device configuration due to phonons. We formulate the electron-phonon interaction that originates from changes in capacitances and tunnel resistances caused by the breathing and oblong vibrations of the island that forms part of the transistor. We derive transport properties by means of the master equation. For a single electron transistor with a gold nanoparticle island with a radius of 1 nm, we demonstrate the contribution to the transport properties that originates from tunneling channels associated with THz phonon emission and absorption.
資源タイプ	学術雑誌論文
出版タイプ	Accepted Manuscript
PISSN	0577-9073