Nanowire of hexagonal gallium oxynitride: Direct observation of its stacking disorder and its long nanowire growth

Masubuchi, Yuji; Yamaoka, Ryohei; Tohei, Tetsuya et al.

Journal of the European Ceramic Society, 2012, 32(9), 1989-1993

Permalink : https://hdl.handle.net/2115/49511

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アクセス権
open access
URI
https://hdl.handle.net/2115/49511
タイトル
Nanowire of hexagonal gallium oxynitride: Direct observation of its stacking disorder and its long nanowire growth
著者
Masubuchi, Yuji ; Yamaoka, Ryohei ; Tohei, Tetsuya ; Mizoguchi, Teruyasu ; Ikuhara, Yuichi ; Kikkawa, Shinichi
e-Rad_Researcher
80466440
著者名
Masubuchi, Yuji
著者名
Yamaoka, Ryohei
著者名
Tohei, Tetsuya
著者名
Mizoguchi, Teruyasu
著者名
Ikuhara, Yuichi
e-Rad_Researcher
10127219
著者名
Kikkawa, Shinichi
言語
英語
キーワード
Fibres
Electron microscopy
Oxynitrides
Defects
発行日
2012-07
出版者
Elsevier
収録物名
Journal of the European Ceramic Society
巻(号)
32(9)
ページ
1989-1993
抄録
The crystal structure of gallium oxynitride nanowire was investigated by using scanning transmission electron microscopy. Gallium oxynitride nanowire was directly observed to have a biphasic wurtzite and zinc-blende structure. There was a stacking disorder of several atomic layers between the two phases. The new biphasic nanowire formed due to the presence of Ni in starting material because its nitride has a zinc-blende structure whereas gallium oxynitride has the wurtzite structure. Crystal growth of gallium oxynitride nanowires was studied using seed crystals. Seed crystals and amorphous gallium oxide precursors were annealed under different ammonia flow rates to grow gallium oxynitride nanowires. The nanowires grew to length of 150 μm but they did not grow laterally when the ammonia flow rate was 50 mL/min.
資源タイプ
学術雑誌論文
出版タイプ
Accepted Manuscript
PISSN
0955-2219
関連情報 (isVersionOf)
出版社版DOI
https://doi.org/10.1016/j.jeurceramsoc.2011.10.038