Effect of indium-flush method on the control of photoluminescence energy of highly uniform self-assembled InAs quantum dots by slow molecular beam epitaxy growth

Sasakura, H.; Kayamori, S.; Adachi, S. et al.

Journal of Applied Physics, 2007, 102(1), 013515-1-013515-4

Permalink : https://hdl.handle.net/2115/49867

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アクセス権	open access
URI	https://hdl.handle.net/2115/49867
タイトル	Effect of indium-flush method on the control of photoluminescence energy of highly uniform self-assembled InAs quantum dots by slow molecular beam epitaxy growth
著者	Sasakura, H. ; Kayamori, S. ; Adachi, S. ; Muto, S.
著者名 Sasakura, H.
著者名 Kayamori, S.
著者名 Adachi, S.
著者名 Muto, S.
言語	英語
発行日	2007
出版者	American Institute of Physics
収録物名	Journal of Applied Physics
巻(号)	102(1)
ページ	013515-1-013515-4
抄録	The control of the emission energy from self-assembled InAs quantum dots has been demonstrated by using indium flush. The low-temperature indium-flush method was found to control the emission energy preserving the high structural uniformity attributed to the slow dot growth. In the standard indium-flush method, where the substrate temperature was raised up from the dot-growth temperature, blueshift larger than the shift by the low-temperature indium flush was observed and was explained reasonably by the enhanced In/Ga-interdiffusion. Also, the effect of AlGaAs capping layer before the indium-flush step was studied.
資源タイプ	学術雑誌論文
出版タイプ	Version of Record
PISSN	0021-8979
NCID	AA00693547
関連情報 (isIdenticalTo)	出版社版DOI https://doi.org/10.1063/1.2752598