Native Oxide Removal from InAlN Surfaces by Hydrofluoric Acid Based Treatment

Nakano, Takuma; Akazawa, Masamichi

Native Oxide Removal from InAlN Surfaces by Hydrofluoric Acid Based Treatment

Nakano, Takuma; Akazawa, Masamichi

IEICE Transactions On Electronics, 2013, E96C(5), 686-689

Permalink : https://hdl.handle.net/2115/53049

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アクセス権	open access
URI	https://hdl.handle.net/2115/53049
タイトル	Native Oxide Removal from InAlN Surfaces by Hydrofluoric Acid Based Treatment
著者	著者名 Nakano, Takuma
著者	e-Rad_Researcher 30212400 著者名 Akazawa, Masamichi
言語	英語
キーワード	InAlN
	XPS
	surface treatment
	HF
	native oxide
発行日	2013-05
出版者	IEICE-Inst Electronics Information Communications Eng
収録物名	IEICE Transactions On Electronics
巻(号)	E96C(5)
ページ	686-689
抄録	We investigated the effects of chemical treatments for removing native oxide layers on InAlN surfaces by X-ray photoelectron spectroscopy (XPS). The untreated surface of the air exposed InAlN layer was covered with the native oxide layer mainly composed of hydroxides. Hydrochloric acid treatment and ammonium hydroxide treatment were not efficient for removing the native oxide layer even after immersion for 15 min, while hydrofluoric acid (HF) treatment led to a removal in a short treatment time of 1 min. After the HF treatment, the surface was prevented from reoxidation in air for 1 h. We also found that the 5-min buffered HE treatment had almost the same effect as the 1-min HF treatment. Finally, an attempt was made to apply the HF-based treatment to the metal-InAlN contact to confirm the XPS results.
資源タイプ	学術雑誌論文
出版タイプ	Version of Record
権利情報	copyright©2013 IEICE
PISSN	0916-8524
NCID	AA10826283
関連情報	URI http://search.ieice.org/
関連情報 (isIdenticalTo)	出版社版DOI https://doi.org/10.1587/transele.E96.C.686