Single-electron AND/NAND logic circuits based on a self-organized dot network

Nakajima, F.; Miyoshi, Y.; Motohisa, J.; Fukui, T.

Single-electron AND/NAND logic circuits based on a self-organized dot network

Nakajima, F.; Miyoshi, Y.; Motohisa, J. et al.

Applied Physics Letters, 2003, 83(13), 2680-2682

Permalink : https://hdl.handle.net/2115/5518

このアイテムのアクセス数:2,459件（2026-03-14 22:18 集計）

閲覧可能ファイル

ファイル	フォーマット	サイズ	閲覧回数	説明
APL83-13	pdf	277 KB	2,408

論文情報

ファイル出力 EndNote Basic出力 Mendeley出力

アクセス権	open access
URI	https://hdl.handle.net/2115/5518
タイトル	Single-electron AND/NAND logic circuits based on a self-organized dot network
著者	Nakajima, F. ; Miyoshi, Y. ; Motohisa, J. ; Fukui, T.
著者名 Nakajima, F.
著者名 Miyoshi, Y.
e-Rad_Researcher 60212263 著者名 Motohisa, J. 本久, 順一
e-Rad_Researcher 30240641 著者名 Fukui, T.
言語	英語
発行日	2003-09-29
出版者	American Institute of Physics
収録物名	Applied Physics Letters
巻(号)	83(13)
ページ	2680-2682
抄録	We experimentally demonstrated single-electron operations of an AND/NAND logic circuit based on a self-organized GaAs quantum-dot (QD) network fabricated by applying a selective-area metalorganic vapor-phase epitaxy technique. Single-electron logic operations using four cooperating single-electron tunneling (SET) transistors has been tested. This logic circuit has an architecture based on a binary decision diagram (BDD) using a Coulomb blockade (CB) in GaAs QDs, which is a representation of digital logic functions using directed graphs. BDD node devices consisting of two SET transistors achieved a two-way path switching operation in single-electron mode due to the CB effects which appeared complementarily in the two SET transistors at 1.9 K. We also demonstrated an AND/NAND operation in a logic circuit by integrating two BDD nodes.
資源タイプ	学術雑誌論文
出版タイプ	Version of Record
権利情報	Copyright © 2003 American Institute of Physics
PISSN	0003-6951
関連情報	URI http://www.aip.org/
関連情報 (isIdenticalTo)	出版社版DOI https://doi.org/10.1063/1.1614845