open access

https://hdl.handle.net/2115/5533

A novel InGaAs/InAlAs insulated gate pseudomorphic HEMT with a silicon interface control layer showing high DC- and RF-performance

英語

2001-07

IEEE

IEEE Electron Device Letters

22(7)

312-314

A novel InGaAs/InAlAs insulated gate pseudomorphic HEMT (IG-PHEMT) utilizing a silicon interface control layer (Si ICL) was successfully fabricated and its DC and RF performances were characterized. The device showed high transconductance of 177 mS/mm even for a gate length of 1.6 μm. As compared with the conventional Schottky gate PHEMTs, the gate leakage current was reduced by 4 orders of magnitudes and the gate breakdown voltage was increased up to 39 V. Well-behaved RF characteristics with the current gain cutoff frequency, fT, of 9 GHz and the maximum oscillation frequency, fmax, of 38 GHz were obtained for the 1.6 μm-gate-length device

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IEEE, Electron Device Letters, 22, 7, 2001, p312-314 ©2001 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.”

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