Structural anisotropy in GaN films grown on vicinal 4H-SiC surfaces by metallorganic molecular-beam epitaxy

Kato, Jun-ichi; Tanaka, Satoru; Yamada, Satoshi; Suemune, Ikuo

Structural anisotropy in GaN films grown on vicinal 4H-SiC surfaces by metallorganic molecular-beam epitaxy

Kato, Jun-ichi; Tanaka, Satoru; Yamada, Satoshi et al.

Applied Physics Letters, 2003, 83(8), 1569-1571

Permalink : https://hdl.handle.net/2115/5647

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アクセス権	open access
URI	https://hdl.handle.net/2115/5647
タイトル	Structural anisotropy in GaN films grown on vicinal 4H-SiC surfaces by metallorganic molecular-beam epitaxy
著者	Kato, Jun-ichi ; Tanaka, Satoru ; Yamada, Satoshi ; Suemune, Ikuo
著者名 Kato, Jun-ichi
e-Rad_Researcher 80281640 著者名 Tanaka, Satoru 田中, 悟
著者名 Yamada, Satoshi
e-Rad_Researcher 00112178 著者名 Suemune, Ikuo
言語	英語
発行日	2003-08-25
出版者	American Institute of Physics
収録物名	Applied Physics Letters
巻(号)	83(8)
ページ	1569-1571
抄録	GaN grown directly on 4H-SiC substrates by metallorganic molecular-beam epitaxy is investigated in terms of nucleation, coalescence, and growth front evolution. The effects of SiC surface configurations such as step and terrace structures on GaN film growth physics are examined in detail. Comparative studies using on-axis and vicinal SiC surfaces indicate distinguishable differences in structural and morphological characteristics. An anisotropic x-ray characteristic is observed for the GaN film deposited on the vicinal stepped SiC surfaces. This is due to preferential nucleation and coalescence of GaN islands along step edges, which are induced by the confinement of adatoms on the narrow terraces on the vicinal SiC surface.
資源タイプ	学術雑誌論文
出版タイプ	Version of Record
権利情報	Copyright © 2003 American Institute of Physics
PISSN	1098-0121
関連情報	URI http://www.aip.org/
関連情報 (isIdenticalTo)	出版社版DOI https://doi.org/10.1063/1.1605791