open access

https://hdl.handle.net/2115/57448

Recent progress in integration of III-V nanowire transistors on Si substrate by selective-area growth

英語

tunnel FET

2014-10-01

IOP Publishing

Journal of Physics D: Applied Physics

47(39)

394001

We report on the recent progress in electronic applications using III-V nanowires (NWs) on Si substrates using the selective-area growth method. This method could align vertical III-V NWs on Si under specific growth conditions. Detailed studies of the III-V NW/Si heterointerface showed the possibility of achieving coherent growth regardless of misfit dislocations in the III-V/Si heterojunction. The vertical III-V NWs grown using selective-area growth were utilized for high performance vertical field-effect transistors (FETs). Furthermore, III-V NW/Si heterointerfaces with fewer misfit dislocations provided us with a unique band discontinuity with a new functionality that can be used for the application of tunnel diodes and tunnel FETs. These demonstrations could open the door to a new approach for creating low power switches using III-V NWs as building-blocks of future nanometre-scaled electronic circuits on Si platforms.

学術雑誌論文

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Creative Commons Attribution 3.0 Unported

0022-3727