Hole Doping of Tin Bromide and Lead Bromide Organic Inorganic Hybrid Semiconductors

Lorena, Giancarlo S.; Hasegawa, Hiroyuki; Takahashi, Yukihiro et al.

Chemistry Letters, 2014, 43(10), 1535-1537

Permalink : https://hdl.handle.net/2115/57496

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アクセス権	open access
URI	https://hdl.handle.net/2115/57496
タイトル	Hole Doping of Tin Bromide and Lead Bromide Organic Inorganic Hybrid Semiconductors
著者	Lorena, Giancarlo S. ; Hasegawa, Hiroyuki ; Takahashi, Yukihiro ; Harada, Jun ; Inabe, Tamotsu
著者名 Lorena, Giancarlo S.
e-Rad_Researcher 10399537 著者名 Hasegawa, Hiroyuki
e-Rad_Researcher 50236329 著者名 Takahashi, Yukihiro
e-Rad_Researcher 00313172 著者名 Harada, Jun
e-Rad_Researcher 20168412 著者名 Inabe, Tamotsu
言語	英語
発行日	2014-10-05
出版者	Chemical Society of Japan
収録物名	Chemistry Letters
巻(号)	43(10)
ページ	1535-1537
抄録	Isomorphous layered A(2)MBr(4) perovskite (A = C6H5C2-H4NH3+ and C6H9C2H4NH3+; M = Sn and Pb) semiconductors with energy gaps of 2.5-2.9 eV were prepared. Though the as-grown A(2)MBr(4) perovskites displayed lower conductivities than the iodide analogs, they were found to be spontaneously doped. Furthermore, we demonstrated that hole doping is effective in wide-ranging A(2)MX(4) materials that have sizable valence and conduction bands with tunable band gaps, showing potential as soluble semiconductors.
資源タイプ	学術雑誌論文
出版タイプ	Accepted Manuscript
PISSN	0366-7022
EISSN	1348-0715
関連情報 (isVersionOf)	出版社版DOI https://doi.org/10.1246/cl.140536