Formation of GaN-Porous Structures Using Photo-Assisted Electrochemical Process in Back-Side Illumination Mode

Watanabe, Akio; Kumazaki, Yusuke; Yatabe, Zenji et al.

ECS Electrochemistry Letters, 2015, 4(5), H11-H13

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アクセス権
open access
URI
https://hdl.handle.net/2115/58546
タイトル
Formation of GaN-Porous Structures Using Photo-Assisted Electrochemical Process in Back-Side Illumination Mode
著者
Watanabe, Akio ; Kumazaki, Yusuke ; Yatabe, Zenji ; Sato, Taketomo
著者名
Watanabe, Akio
著者名
Kumazaki, Yusuke
著者名
Yatabe, Zenji
e-Rad_Researcher
50343009
著者名
Sato, Taketomo
言語
英語
キーワード
back-side illumination
GaN
porous structure
発行日
2015-03-14
出版者
Electrochemical Society
収録物名
ECS Electrochemistry Letters
巻(号)
4(5)
ページ
H11-H13
抄録
We investigated the structural features of gallium-nitride-porous structures formed using the photo-assisted electrochemical process in the back-side illumination (BSI) mode. The pore diameter and depth were strongly affected by the direction of illumination, where higher controllability was achieved compared with front-side illumination. The spectroscopic measurements revealed that illumination with photon energy below the bulk bandgap plays an important role in pore formation. We propose a formation model by considering the Franz-Keldysh effect that can consistently explain the obtained experimental data in which anodic etching occurs only at the pore tips under the high electric field induced in the depletion region.
資源タイプ
学術雑誌論文
出版タイプ
Version of Record
権利情報
© The Electrochemical Society, Inc. 2015. All rights reserved. Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS). The archival version of this work was published in ECS Electrochemistry Letters.
PISSN
2162-8726
EISSN
2162-8734
関連情報 (isIdenticalTo)
出版社版DOI
https://doi.org/10.1149/2.0031505eel