Temperature-dependent spin injection dynamics in InGaAs/GaAs quantum well-dot tunnel-coupled nanostructures

Chen, S. L.; Kiba, T.; Yang, X. J.; Takayama, J.; Murayama, A.

Temperature-dependent spin injection dynamics in InGaAs/GaAs quantum well-dot tunnel-coupled nanostructures

Chen, S. L.; Kiba, T.; Yang, X. J. et al.

Journal of Applied Physics, 2016, 119(11), 115701-1-115701-5

Permalink : https://hdl.handle.net/2115/64773

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アクセス権	open access
URI	https://hdl.handle.net/2115/64773
タイトル	Temperature-dependent spin injection dynamics in InGaAs/GaAs quantum well-dot tunnel-coupled nanostructures
著者	Chen, S. L. ; Kiba, T. ; Yang, X. J. ; Takayama, J. ; Murayama, A.
著者名 Chen, S. L.
著者名 Kiba, T.
著者名 Yang, X. J.
著者名 Takayama, J.
e-Rad_Researcher 00333906 著者名 Murayama, A.
言語	英語
発行日	2016-03-22
出版者	American Institute of Physics (AIP)
収録物名	Journal of Applied Physics
巻(号)	119(11)
ページ	115701-1-115701-5
抄録	Time-resolved optical spin orientation spectroscopy was employed to investigate the temperature-dependent electron spin injection in In0.1Ga0.9As quantum well (QW) and In0.5Ga0.5As quantum dots (QDs) tunnel-coupled nanostructures with 4, 6, and 8 nm-thick GaAs barriers. The fast picosecond-ranged spin injection from QW to QD excited states (ES) was observed to speed up with temperature, as induced by pronounced longitudinal-optical (LO)-phonon-involved multiple scattering process, which contributes to a thermally stable and almost fully spin-conserving injection within 5-180 K. The LO-phonon coupling was also found to cause accelerated electron spin relaxation of QD ES at elevated temperature, mainly via hyperfine interaction with random nuclear field. (C) 2016 AIP Publishing LLC.
資源タイプ	学術雑誌論文
出版タイプ	Version of Record
権利情報	The following article appeared in Journal of Applied Physics 119, 115701 (2016); doi: 10.1063/1.4944039 and may be found at http://doi.org/10.1063/1.4944039.
PISSN	0021-8979
関連情報 (isIdenticalTo)	出版社版DOI https://doi.org/10.1063/1.4944039