Effect of SiC Addition on Oxidation Behavior of ZrB2 at 1273 K and 1473 K

Zhang, Lihua; Kurokawa, Kazuya

Oxidation of metals, 2016, 85(3-4), 311-320

Permalink : https://hdl.handle.net/2115/64911

このアイテムのアクセス数:1,145件（2026-08-13 18:05 集計）

閲覧可能ファイル 

ファイル フォーマット サイズ 閲覧回数 説明
Manuscript for Oxidation of Metals-Effect of SiC addition on oxidation behavior of ZrB2 at 1273 K and 1473 K-Lihua Zhang pdf 1.01 MB 1,252

論文情報

ファイル出力 EndNote Basic出力 Mendeley出力

アクセス権
open access
URI
https://hdl.handle.net/2115/64911
タイトル
Effect of SiC Addition on Oxidation Behavior of ZrB2 at 1273 K and 1473 K
著者
著者名
Zhang, Lihua
e-Rad_Researcher
00161779
著者名
Kurokawa, Kazuya
言語
英語
キーワード
Zirconium diboride
Silicon carbide
Oxidation
High temperature
発行日
2016-04
出版者
Springer
収録物名
Oxidation of metals
巻(号)
85(3-4)
ページ
311-320
抄録
The oxidation behavior of ZrB2-SiC composites with different contents of SiC addition was investigated at 1273 and 1473 K in air for 12 h in this study. The SiC addition contents ranged from 0 to 30 wt%. The results showed that when ZrB2-SiC composites were oxidized at 1273 K in air, a two-oxide layer-structure forms: a continuous glassy layer and a ZrO2 layer contained unoxidized SiC. When SiC content is 5 and 10 wt%, the glassy layer is mainly composed by B2O3. When SiC content is 20 and 30 wt%, a borosilicate glass could be formed on the top layer, which could improve the oxidation resistance of ZrB2. When ZrB2-SiC composites were oxidized at 1473 K in air, the oxide layer was composed of ZrO2 and SiO2 and unreacted SiC. Additionally, when SiC addition content was higher than 10 wt%, a continuous borosilicate glass layer could be formed on the top of the oxide layer at 1473 K. With the increase of SiC content in ZrB2, the oxide layer thickness decreased at both 1273 and 1473 K.
資源タイプ
学術雑誌論文
出版タイプ
Accepted Manuscript
権利情報
The final publication is available at link.springer.com
PISSN
0030-770X
関連情報 (isVersionOf)
出版社版DOI
https://doi.org/10.1007/s11085-015-9585-9