Characterization of capture cross sections of interface states in dielectric/III-nitride heterojunction structures

Matys, M.; Stoklas, R.; Kuzmik, J.; Adamowicz, B.; Yatabe, Z.; Hashizume, T.

Characterization of capture cross sections of interface states in dielectric/III-nitride heterojunction structures

Matys, M.; Stoklas, R.; Kuzmik, J. et al.

Journal of Applied Physics, 2016, 119(20), 205304

Permalink : https://hdl.handle.net/2115/65858

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論文情報

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アクセス権	open access
URI	https://hdl.handle.net/2115/65858
タイトル	Characterization of capture cross sections of interface states in dielectric/III-nitride heterojunction structures
著者	Matys, M. ; Stoklas, R. ; Kuzmik, J. ; Adamowicz, B. ; Yatabe, Z. ; Hashizume, T.
著者名 Matys, M.
著者名 Stoklas, R.
著者名 Kuzmik, J.
著者名 Adamowicz, B.
著者名 Yatabe, Z.
e-Rad_Researcher 80149898 著者名 Hashizume, T.
言語	英語
キーワード	Interface structure
	Heterojunctions
	III-V semiconductors
	Aluminium
	Insulators
発行日	2016-05-31
出版者	American Institute of Physics (AIP)
収録物名	Journal of Applied Physics
巻(号)	119(20)
ページ	205304
抄録	We performed, for the first time, quantitative characterization of electron capture cross sections sigma of the interface states at dielectric/III-N heterojunction interfaces. We developed a new method, which is based on the photo-assisted capacitance-voltage measurements using photon energies below the semiconductor band gap. The analysis was carried out for AlGaN/GaN metal-insulatorsemiconductor heterojunction (MISH) structures with Al2O3, SiO2, or SiN films as insulator deposited on the AlGaN layers with Al content (x) varying over a wide range of values. Additionally, we also investigated an Al2O3/InAlN/GaN MISH structure. Prior to insulator deposition, the AlGaN and InAlN surfaces were subjected to different treatments. We found that sigma for all these structures lies in the range between 5 x 10(-19) and 10(-16) cm(2). Furthermore, we revealed that sigma for dielectric/AlxGa1-xN interfaces increases with increasing x. We showed that both the multiphonon-emission and cascade processes can explain the obtained results. Published by AIP Publishing.
資源タイプ	学術雑誌論文
出版タイプ	Version of Record
権利情報	The following article appeared in J. Appl. Phys. 119, 205304 (2016) and may be found at http://dx.doi.org/10.1063/1.4952708.
PISSN	0021-8979
関連情報 (isIdenticalTo)	出版社版DOI https://doi.org/10.1063/1.4952708