open access

https://hdl.handle.net/2115/66634

Characterization of GaAs-Based Three-Branch Nanowire Junction Devices by Light-Induced Local Conductance Modulation Method

英語

2013-06

IOP Publishing

Japanese Journal of Applied Physics(JJAP)

52(6S)

06GE08

Nonlinear voltage transfer characteristics in GaAs-based three-branch nanowire junction (TBJ) devices were investigated by a light-induced local conductance modulation method. In this measurement system, the conductance in the device was locally increased by focused laser light irradiation. The nonlinear transfer curve was greatly changed when the laser light was irradiated on the positively biased branch. The conductance domain was found to exist at the end of the positively biased branch of the TBJ by scanning the light position. When a SiNx thin layer was deposited on the nanowire surface, the surface potential was increased and the nonlinearity in the transfer curve was reinforced simultaneously. The obtained results suggest that the asymmetric channel depletion model is appropriate for the observed nonlinearity mechanism in the GaAs TBJ at room temperature.

学術雑誌論文

Accepted Manuscript

© 2013 The Japan Society of Applied Physics

0021-4922

1347-4065