Composition controllability of InGaAs nanowire arrays in selective area growth with controlled pitches on Si platform

Chiba, Kohei; Tomioka, Katsuhiro; Yoshida, Akinobu et al.

AIP Advances, 2017, 7(12), 125304

Permalink : https://hdl.handle.net/2115/68223

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アクセス権	open access
URI	https://hdl.handle.net/2115/68223
タイトル	Composition controllability of InGaAs nanowire arrays in selective area growth with controlled pitches on Si platform
著者	Chiba, Kohei ; Tomioka, Katsuhiro ; Yoshida, Akinobu ; Motohisa, Junichi
著者名 Chiba, Kohei
e-Rad_Researcher 60519411 著者名 Tomioka, Katsuhiro
著者名 Yoshida, Akinobu
e-Rad_Researcher 60212263 著者名 Motohisa, Junichi
言語	英語
発行日	2017-12
出版者	American Institute of Physics (AIP)
収録物名	AIP Advances
巻(号)	7(12)
ページ	125304
抄録	Composition controllability of vertical InGaAs nanowires (NWs) on Si integrated by selective area growth was characterized for Si photonics in the optical telecommunication bands. The pitch of pre-patterned holes (NW sites) changed to an In/Ga alloy-composition in the solid phase during the NW growth. The In composition with a nanometer-scaled pitch differed completely from that with a mu m-scaled pitch. Accordingly, the growth morphologies of InGaAs NWs show different behavior with respect to the In/Ga ratio. (c) 2017 Author(s).
資源タイプ	学術雑誌論文
出版タイプ	Version of Record
権利情報	Creative Commons Attribution 4.0 International
PISSN	2158-3226
関連情報 (isIdenticalTo)	出版社版DOI https://doi.org/10.1063/1.4993689