open access

https://hdl.handle.net/2115/71320

Influence of off-stoichiometry on magnetoresistance characteristics of Co2MnSi/Ag-based current-perpendicular-to-plane spin valves

英語

2017-08-21

American Institute of Physics (AIP)

Applied physics letters

111(8)

82403

The influence of off-stoichiometry of Co2MnSi (CMS) spin sources on giant magnetoresistance characteristics was investigated for CMS/Ag-based current-perpendicular-to-plane spin valves prepared with various Mn compositions a in Co2Mn alpha Si0.82 electrodes. The magnetoresistance ratio of the prepared CMS/Co50Fe50 (CoFe) (1.1 nm)/Ag/CoFe (1.1)/CMS spin valves systematically increased with a from 11.4% for Mn-deficient alpha = 0.62 to 20.7% for Mn-rich alpha = 1.45 at 290 K. This result suggests that increasing a from a Mn-deficient to Mn-rich value increases the spin polarization by suppressing Co-Mn antisites harmful to the half-metallicity. Thus, our results demonstrate that appropriately controlling the film composition toward a Mn-rich one is highly effective for enhancing the half-metallicity of CMS in CMS-based spin valves, as it is in CMS-based magnetic tunnel junctions. Published by AIP Publishing.

学術雑誌論文

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This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing.The following article appeared in Appl. Phys. Lett.111, 082403 (2017); doi: 10.1063/1.5000244, and may be found at http://dx.doi.org/10.1063/1.5000244.

0003-6951