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アクセス権	open access
URI	https://hdl.handle.net/2115/81620
タイトル	Notes on Reproducibility of Ge2Sb2Te5 Properties
著者	e-Rad_Researcher 20002313 著者名 Tanaka, Keiji
言語	英語
キーワード	amorphous
	chalcogenide
	phase-change
	sputter
	electrical conductivity
発行日	2020-06
出版者	Wiley-Blackwell
収録物名	Physica status solidi B-basic solid state physics
巻(号)	257(6)
ページ	1900756
抄録	Sputtered Ge2Sb2Te5 (GST) films are utilized in phase-change devices, whereas the quantitative reproducibility of fundamental properties such as refractive index and electrical conductivity remains unsatisfactory. Herein, it is exemplified that the properties are considerably affected by sputter conditions. It seems that high-quality amorphous films are deposited with slow dc sputtering at high voltages and low Ar pressures. It is also discussed whether the cubic GST is a degenerate or a nondegenerate semiconductor.
資源タイプ	学術雑誌論文
出版タイプ	Accepted Manuscript
権利情報	This is the peer reviewed version of the following article: Tanaka, K. (2020), Notes on Reproducibility of Ge2Sb2Te5 Properties. Phys. Status Solidi B, 257: 1900756, which has been published in final form at https://doi.org/10.1002/pssb.201900756. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions.
PISSN	0370-1972
関連情報 (isVersionOf)	出版社版DOI https://doi.org/10.1002/pssb.201900756

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