Fabrication of GaAs-based integrated half and full adders by novel hexagonal BDD quantum circuit approach

Seiya, Kasai; Yumoto, Miki; Hasegawa, Hideki

Solid-State Electronics, 2003, 47(2), 199-204

Permalink : https://hdl.handle.net/2115/8358

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アクセス権
open access
URI
https://hdl.handle.net/2115/8358
タイトル
Fabrication of GaAs-based integrated half and full adders by novel hexagonal BDD quantum circuit approach
著者
Seiya, Kasai ; Yumoto, Miki ; Hasegawa, Hideki
e-Rad_Researcher
30312383
著者名
Seiya, Kasai
著者名
Yumoto, Miki
著者名
Hasegawa, Hideki
言語
英語
発行日
2003-02
出版者
Elsevier
収録物名
Solid-State Electronics
巻(号)
47(2)
ページ
199-204
記述
http://www.sciencedirect.com/science/journal/00381101
抄録
Feasibility of a novel hexagonal binary decision diagram (BDD) quantum circuit approach based on Schottky wrap gate (WPG) control of GaAs/AlGaAs hexagonal nanowire network has been demonstrated through fabrication of half adders and full adders. Quantum BDD node devices were designed and realized utilizing WPG-controlled quantum wire (QWR) and single electron (SE) switches. BDD half sum and carry elements of a half adder were fabricated by integrating the WPG BDD node devices and they operated correctly through either quantum transport at low temperature or many electron classical transport at room temperature. Successful design of hexagonal BDD full adders for arbitrary bits on a hexagonal network without nanowire crossover and fabrication of QWR-based BDD 2-bit full adder on the AlGaAs/GaAs etched hexagonal nanowire network with node density of 10^7 cm^-2 clearly indicated the capability of the present approach for large scale quantum device integration.
資源タイプ
学術雑誌論文
出版タイプ
Accepted Manuscript
PISSN
0038-1101
関連情報 (isVersionOf)
出版社版DOI
https://doi.org/10.1016/S0038-1101(02)00195-8