GaAs and InGaAs Single Electron Hexagonal Nanowire Circuits Based on Binary Decision Diagram Logic Architecture

Kasai, Seiya; Hasegawa, Hideki

GaAs and InGaAs Single Electron Hexagonal Nanowire Circuits Based on Binary Decision Diagram Logic Architecture

Kasai, Seiya; Hasegawa, Hideki

Physica E: Low-dimensional Systems and Nanostructures, 2002, 13(2-4), 925-929

Permalink : https://hdl.handle.net/2115/8359

このアイテムのアクセス数:2,310件（2026-03-16 02:37 集計）

閲覧可能ファイル

ファイル	フォーマット	サイズ	閲覧回数	説明
MSS10	pdf	704 KB	1,974

論文情報

ファイル出力 EndNote Basic出力 Mendeley出力

アクセス権	open access
URI	https://hdl.handle.net/2115/8359
タイトル	GaAs and InGaAs Single Electron Hexagonal Nanowire Circuits Based on Binary Decision Diagram Logic Architecture
著者	e-Rad_Researcher 30312383 著者名 Kasai, Seiya
著者	著者名 Hasegawa, Hideki
言語	英語
キーワード	GaAs
	InGaAs
	Hexagonal nanowire network
	BDD
	Single electron circuit
発行日	2002-03
出版者	Elsevier
収録物名	Physica E: Low-dimensional Systems and Nanostructures
巻(号)	13(2-4)
ページ	925-929
抄録	The feasibility of a novel approach for single electron quantum LSIs (Q-LSIs) is investigated. It is based on the binary-decision-diagram (BDD) logic architecture, using arrays of GaAs and InGaAs single electron BDD node devices formed on hexagonal nanowire networks. Single electron branch switches using nanometer-scale Schottky wrap gates (WPGs) on AlGaAs/GaAs etched nanowires and on InGaAs nanowires by selective MBE growth were fabricated. They showed clear conductance oscillation characteristics controlled by a single electron lateral resonant tunneling. Successful design and fabrication of GaAs-based single electron BDD node devices and circuits including OR logic elements and a 2 bit adder indicates basic feasibility of realizing single electron Q-LSIs by the novel approach.
資源タイプ	学術雑誌論文
出版タイプ	Accepted Manuscript
PISSN	1386-9477
関連情報	URI http://www.sciencedirect.com/science/journal/13869477
関連情報 (isVersionOf)	出版社版DOI https://doi.org/10.1016/S1386-9477(02)00236-9