GaAs quantum wire transistors and single electron transistors using Schottky wrap gates for quantum integrated circuits

Kasai, S.; Satoh, Y.; Hasegawa, H.

Institute of Physics conference series, 2000, 166, 219-222

Permalink : https://hdl.handle.net/2115/8360

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アクセス権
open access
URI
https://hdl.handle.net/2115/8360
タイトル
GaAs quantum wire transistors and single electron transistors using Schottky wrap gates for quantum integrated circuits
著者
Kasai, S. ; Satoh, Y. ; Hasegawa, H.
著者名
Kasai, S.
著者名
Satoh, Y.
著者名
Hasegawa, H.
言語
英語
発行日
2000
出版者
Institute of Physics
収録物名
Institute of Physics conference series
巻(号)
166
ページ
219-222
抄録
Basic electrical properties of Schottky wrap-gate (WPG) controlled GaAs quantum wire transistors (QWTrs) and single electron transistors (SETs) are investigated to clarify their applicability to future quantum integrated circuits. The fabricated WPG QWTrs showed excellent gate-control characteristics and conductance quantization, indicating that the WPG can produce a strong lateral confinement potential. The WPG SETs showed clear and high conductance peaks that were suitable for switching device application. A WPG SET-based inverter logic circuits combining a WPG QWTr active load with a WPG SET was fabricated and it showed a clear inverter action, whose inverter gain was in reasonable agreement with the voltage gain of the driver two-gate WPG SET estimated from the Coulomb diamond plot.
会議記述
会議名
International Symposium on Compound Semiconductors
回次
26
開催地
Berlin
開催国
Germany
資源タイプ
会議発表論文
出版タイプ
Accepted Manuscript
権利情報
copyright (C) 2000 IOP Publishing Ltd.
関連情報
URI
http://www.iop.org
関連情報 (isPartOf)
Title
Compound semiconductors 1999 : proceedings of the Twenty-sixth International Symposium on Compound Semiconductors held in Berlin, Germany, 22-26 August 1999 / edited by K H Ploog, G Trankle and G Weimann