GaAs Schottky Wrap-Gate Binary-Decision-Diagram Devices for Realization of Novel Single Electron Logic Architecture

Kasai, Seiya; Amemiya, Yoshihito; Hasegawa, Hideki

2000

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アクセス権
open access
URI
https://hdl.handle.net/2115/8369
タイトル
GaAs Schottky Wrap-Gate Binary-Decision-Diagram Devices for Realization of Novel Single Electron Logic Architecture
著者
Kasai, Seiya ; Amemiya, Yoshihito ; Hasegawa, Hideki
著者名
Kasai, Seiya
著者名
Amemiya, Yoshihito
著者名
Hasegawa, Hideki
言語
英語
発行日
2000
出版者
IEEE
抄録
Novel single electron binary-decision-diagram (BDD) node devices and circuits based on Schottky wrap-gate (WPG) control of AlGaAs/GaAs nanowires were designed, fabricated and characterized for the first time. The WPG BDD node device showed clear path switching as well as conductance oscillation by WPG voltage control. WPG-based BDD OR logic circuits were also successfully fabricated. It is also shown that more complex-functional BDD circuits can be realized by suitable layouts of WPGs and nanowires.
会議記述
会議名
International Electron Devices Meeting
回次
2000
開催地
San Francisco, CA
開催国
United States of America
資源タイプ
会議発表論文
出版タイプ
Accepted Manuscript
権利情報
© 2000 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat.No.00CH37138), 2000, p.585-588
関連情報 (isPartOf)
Title
International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat.No.00CH37138), 2000, p.585-588