open access

https://hdl.handle.net/2115/83695

THz wave emission from the Cu2O/Cu interface under femtosecond laser irradiation

英語

femtosecond laser

2021-01-01

IOP Publishing

Applied Physics Express

14(1)

012006

Cu or Cu/Au (80 nm thick Cu, 50 nm thick Au) sputtered on Si were kept at 25 degrees C for a week or annealed at a temperature from 80 to 300 degrees C, then tested for THz emission under femtosecond laser irradiation (35 fs-800 nm). THz radiation was detected from samples annealed from 80 to 170 degrees C, which had a Cu2O/Cu interface as the THz source. Cu/Au/Si annealed at 80 degrees C emitted the highest THz radiation because of high laser absorption by the porous Cu2O layer formed at low temperature and the Au film reflected THz radiation and/or increased the laser absorption by the Fabry-Perot effect.

学術雑誌論文

Accepted Manuscript

Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International

This is the Accepted Manuscript version of an article accepted for publication in Applied Physics Express. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.35848/1882-0786/abd070

1882-0778