Evolution Mechanism of Heterointerface Cross-section during Growth of GaAs Ridge Quantum Wires by Selective Molecular Beam Epitaxy

Sato, Taketomo; Tamai, Isao; Yoshida, Souichi et al.

Applied Surface Science, 2004, 234(1-4), 11-15

Permalink : https://hdl.handle.net/2115/8385

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アクセス権
open access
URI
https://hdl.handle.net/2115/8385
タイトル
Evolution Mechanism of Heterointerface Cross-section during Growth of GaAs Ridge Quantum Wires by Selective Molecular Beam Epitaxy
著者
Sato, Taketomo ; Tamai, Isao ; Yoshida, Souichi ; Hasegawa, Hideki
e-Rad_Researcher
50343009
著者名
Sato, Taketomo
著者名
Tamai, Isao
著者名
Yoshida, Souichi
著者名
Hasegawa, Hideki
言語
英語
キーワード
selective growth
molecular beam epitaxy (MBE)
patterned substrate
growth mechanism
GaAs
発行日
2004-07-15
出版者
Elsevier
収録物名
Applied Surface Science
巻(号)
234(1-4)
ページ
11-15
抄録
The mechanism determining heterointerface cross-sections is studied for GaAs ridge quantum wires (QWRs) grown by selective molecular beam epitaxy (MBE). Arrays of <-1 1 0>- and <-1 -1 2>-orientated QWRs were grown on (001) and (111)B GaAs patterned substrates, respectively. A detailed investigation of cross-sections of wires has shown that the boundary planes appear on both sides of QWRs, keeping a constant angle, θ with respect to the flat top of the substrate pattern, and they determine the lateral wire width. Their evolution mechanism has turned out to be a kinetic process, reflecting differences in migration and atom incorporation rates on different facets. Simple formulas for θ have been derived, and they have shown excellent agreements with experiment. This has led to precise kinetic control of the wire width by growth conditions.
資源タイプ
学術雑誌論文
出版タイプ
Accepted Manuscript
PISSN
0169-4332
関連情報
URI
http://www.sciencedirect.com/science/journal/01694332
関連情報 (isVersionOf)
出版社版DOI
https://doi.org/10.1016/j.apsusc.2004.05.018