A study on sensitivity to an embedded nanostructure in a micrometer-channel-length Si MOSFET

Mitsuya, Takuma; Lyu, Renxiang; Kasai, Seiya

Japanese Journal of Applied Physics, 2024, 63(3), 03SP60

Permalink : https://hdl.handle.net/2115/94202

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論文情報

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アクセス権
open access
URI
https://hdl.handle.net/2115/94202
タイトル
A study on sensitivity to an embedded nanostructure in a micrometer-channel-length Si MOSFET
著者
Mitsuya, Takuma ; Lyu, Renxiang ; Kasai, Seiya
著者名
Mitsuya, Takuma
著者名
Lyu, Renxiang
e-Rad_Researcher
30312383
著者名
Kasai, Seiya
言語
英語
キーワード
nano-artifact metrics
Si metal-oxide-semiconductor field-effect transistor
embedded nanostructure
electrical discrimination
発行日
2024-03-04
出版者
IOP Publishing
収録物名
Japanese Journal of Applied Physics
巻(号)
63(3)
ページ
03SP60
抄録
Nano-artifact metrics (NAM) is an information security technology that uses a nano-scale random structure as a unique identifier, and is expected to provide secure authentication in the Internet of Things era. For electrical discrimination of the two-dimensional random nanostructure in terms of NAM, we investigated the sensitivity to the nanostructure in a Si MOSFET with micrometer channel length in a simulation and experiment. The device simulation showed that the sensitivity was increased by decreasing the channel length and increasing the height of the nano-convex structures. It also showed that a device with a 10 mu m channel length could detect a nano-convex. On the other hand, the fabricated Si MOSFET with a 50 nm height nano-convex showed lower nanostructure sensitivity than that expected in the simulation. A detailed analysis indicated that the degradation of the sensitivity was attributed to fabrication process issues, including the unintentional reduction of the convex size and high source and drain resistance.
資源タイプ
学術雑誌論文
出版タイプ
Accepted Manuscript
権利情報
Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International
権利情報
This is the Accepted Manuscript version of an article accepted for publication in Japanese Journal of Applied Physics(JJAP). IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.35848/1347-4065/ad2650
© 2024 The Japan Society of Applied Physics
PISSN
0021-4922
関連情報 (isVersionOf)
出版社版DOI
https://doi.org/10.35848/1347-4065/ad2650