Analytical derivation of charge relaxation time distribution in transistor from current noise spectrum using inverse integral transformation method

Yatabe, Zenji; Inoue, Shinya; Asubar, Joel T. et al.

Applied Physics Express, 2018, 11(3), 031201

Permalink : https://hdl.handle.net/2115/98907

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アクセス権
open access
URI
https://hdl.handle.net/2115/98907
タイトル
Analytical derivation of charge relaxation time distribution in transistor from current noise spectrum using inverse integral transformation method
著者
Yatabe, Zenji ; Inoue, Shinya ; Asubar, Joel T. ; Kasai, Seiya
ORCID
0000-0003-2069-6677
著者名
Yatabe, Zenji
著者名
Inoue, Shinya
ORCID
0000-0002-1829-4129
著者名
Asubar, Joel T.
著者名
Kasai, Seiya
言語
英語
発行日
2018-02-21
出版者
IOP Publishing
収録物名
Applied Physics Express
巻(号)
11(3)
ページ
031201
抄録
An analytical technique for extracting relaxation time distribution of dynamic charge events from the current noise spectrum of a transistor is developed by applying an inverse integral transformation to the McWhorter model. In our method, the continuous distribution function of relaxation time G(τ) can be analytically derived from the noise spectra S(ω) without spectrum deconvolution. The feasibility of our method is demonstrated by characterizing the charge dynamics of Tetraphenylporphyrin (TPP) molecules dispersed on the surface of a GaAs-based nanowire field-effect transistor (FET). Our analysis successfully verified the time constant of the molecule-related dynamic charge events and effects of photo excitation.
資源タイプ
学術雑誌論文
出版タイプ
Accepted Manuscript
権利情報
© 2018 The Japan Society of Applied Physics
PISSN
1882-0778
EISSN
1882-0786
関連情報 (isVersionOf)
出版社版DOI
https://doi.org/10.7567/apex.11.031201