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The application of an InGaAs/GaAsN strain-compensated superlattice to InAs quantum dots

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タイトル: The application of an InGaAs/GaAsN strain-compensated superlattice to InAs quantum dots
著者: Zhang, Wei 著作を一覧する
Uesugi, Katsuhiro 著作を一覧する
Suemune, Ikuo 著作を一覧する
発行日: 2006年 5月15日
出版者: American Institute of Physics
誌名: Journal of Applied Physics
巻: 99
号: 10
開始ページ: 103103-1
終了ページ: 103103-7
出版社 DOI: 10.1063/1.2197261
抄録: Application of InGaAs/GaAsN strain-compensated superlattice (SCSL) to InAs quantum dots (QDs) has been studied with atomic force microscopy (AFM), reflection high-energy electron diffraction (RHEED), and temperature-dependent photoluminescence (PL) measurements. The insertion of a tensile-strained GaAsN layer between InGaAs layers with high In concentrations can compensate the compressive strain in the InGaAs layers and reduce the flattening of QDs during the growth of the successive InGaAs layers. Compared with QDs capped with a single InGaAs layer of a high In concentration, QDs capped with such SCSLs can achieve almost the same redshift of emission wavelength, while the optical property is highly improved. The mechanism responsible for this is discussed based on the AFM, RHEED, and PL measurements.
Rights: Copyright © 2006 American Institute of Physics
関連URI: http://jap.aip.org/jap/
資料タイプ: article
URI: http://hdl.handle.net/2115/14412
出現コレクション:雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

提供者: 末宗 幾夫

 

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