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北海道大学工学部研究報告 = Bulletin of the Faculty of Engineering, Hokkaido University >
No.41 >

拡散型シリコン n-p-n トランジスタにおける押し出し効果

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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/40802

Title: 拡散型シリコン n-p-n トランジスタにおける押し出し効果
Other Titles: Emitter Dip Effect in Double Diffused n-p-n Silicon Transistor
Authors: 前田, 正雄1 Browse this author
真鍋, 豊孝2 Browse this author
Authors(alt): Maeda, Masao1
Manabe, Toyotaka2
Issue Date: 20-Aug-1966
Publisher: 北海道大学
Journal Title: 北海道大學工學部研究報告
Journal Title(alt): Bulletin of the Faculty of Engineering, Hokkaido University
Volume: 41
Start Page: 167
End Page: 185
Type: bulletin (article)
URI: http://hdl.handle.net/2115/40802
Appears in Collections:北海道大学工学部研究報告 = Bulletin of the Faculty of Engineering, Hokkaido University > No.41

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