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北海道大学工学部研究報告 = Bulletin of the Faculty of Engineering, Hokkaido University >
No.44 >

シリコンMOSダイオードの表面状態の研究

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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/40835

Title: シリコンMOSダイオードの表面状態の研究
Other Titles: Studies on the Surface States of Silicon MOS Diode
Authors: 前田, 正雄1 Browse this author
小林, 敬三2 Browse this author
水野, 政利3 Browse this author
Authors(alt): Maeda, Masao1
Kobayashi, Keizo2
Mizuno, Masatoshi3
Issue Date: 5-Sep-1967
Publisher: 北海道大学
Journal Title: 北海道大學工學部研究報告
Journal Title(alt): Bulletin of the Faculty of Engineering, Hokkaido University
Volume: 44
Start Page: 93
End Page: 112
Type: bulletin (article)
URI: http://hdl.handle.net/2115/40835
Appears in Collections:北海道大学工学部研究報告 = Bulletin of the Faculty of Engineering, Hokkaido University > No.44

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