Ge-Te-Sb非晶質半導体 : 非晶質性と薄膜メモリスイッチング特性


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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/41313

Title:	Ge-Te-Sb非晶質半導体 : 非晶質性と薄膜メモリスイッチング特性
Other Titles:	Ge-Te-Sb Amorphous Semiconductor : Noncrystalline Quality and Memory-type Switching Characteristics of Thin Film
Authors:	近藤, 静雄¹ Browse this author
	小川, 吉彦² Browse this author
	黒部, 貞一³ Browse this author
Authors(alt):	Kondo, Shizuo¹
	Ogawa, Yoshihiko²
	Kurobe, Teiichi³
Issue Date:	4-Oct-1975
Publisher:	北海道大学
Journal Title:	北海道大學工學部研究報告
Journal Title(alt):	Bulletin of the Faculty of Engineering, Hokkaido University
Volume:	77
Start Page:	69
End Page:	77
Type:	bulletin (article)
URI:	http://hdl.handle.net/2115/41313
Appears in Collections:	北海道大学工学部研究報告 = Bulletin of the Faculty of Engineering, Hokkaido University > No.77

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