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北海道大学工学部研究報告 = Bulletin of the Faculty of Engineering, Hokkaido University >
No.77 >

Ge-Te-Sb非晶質半導体 : 非晶質性と薄膜メモリスイッチング特性

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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/41313

Title: Ge-Te-Sb非晶質半導体 : 非晶質性と薄膜メモリスイッチング特性
Other Titles: Ge-Te-Sb Amorphous Semiconductor : Noncrystalline Quality and Memory-type Switching Characteristics of Thin Film
Authors: 近藤, 静雄1 Browse this author
小川, 吉彦2 Browse this author
黒部, 貞一3 Browse this author
Authors(alt): Kondo, Shizuo1
Ogawa, Yoshihiko2
Kurobe, Teiichi3
Issue Date: 4-Oct-1975
Publisher: 北海道大学
Journal Title: 北海道大學工學部研究報告
Journal Title(alt): Bulletin of the Faculty of Engineering, Hokkaido University
Volume: 77
Start Page: 69
End Page: 77
Type: bulletin (article)
URI: http://hdl.handle.net/2115/41313
Appears in Collections:北海道大学工学部研究報告 = Bulletin of the Faculty of Engineering, Hokkaido University > No.77

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