HUSCAP logo Hokkaido Univ. logo

Hokkaido University Collection of Scholarly and Academic Papers >
Graduate School of Engineering / Faculty of Engineering >
北海道大学工学部研究報告 = Bulletin of the Faculty of Engineering, Hokkaido University >
No.114 >

有機金属気相成長法によるGaAsのエピタキシャル成長

Files in This Item:
114_25-32.pdf690.79 kBPDFView/Open
Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/41794

Title: 有機金属気相成長法によるGaAsのエピタキシャル成長
Other Titles: Epitaxial Growth of GaAs by Metalorganic Chemical Vapor Deposition
Authors: 池田, 英治1 Browse this author
赤津, 祐史2 Browse this author
大野, 英男3 Browse this author
長谷川, 英機4 Browse this author
Authors(alt): Ikeda, Eiji1
Akatsu, Yuhji2
Ohno, Hideo3
Hasegawa, Hideki4
Issue Date: 31-May-1983
Publisher: 北海道大学
Journal Title: 北海道大學工學部研究報告
Journal Title(alt): Bulletin of the Faculty of Engineering, Hokkaido University
Volume: 114
Start Page: 25
End Page: 32
Type: bulletin (article)
URI: http://hdl.handle.net/2115/41794
Appears in Collections:北海道大学工学部研究報告 = Bulletin of the Faculty of Engineering, Hokkaido University > No.114

Export metadata:

OAI-PMH ( junii2 , jpcoar )


 

Feedback - Hokkaido University