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北海道大学工学部研究報告 = Bulletin of the Faculty of Engineering, Hokkaido University >
No.121 >

MOCVD成長によるアンドープGaAs中の電子トラップ

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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/41875

Title: MOCVD成長によるアンドープGaAs中の電子トラップ
Other Titles: Deep Electron Traps in Undoped GaAs Grown by MOCVD
Authors: 橋詰, 保1 Browse this author →KAKEN DB
池田, 英治2 Browse this author
赤津, 祐史3 Browse this author
大野, 英男4 Browse this author →KAKEN DB
長谷川, 英機5 Browse this author →KAKEN DB
Authors(alt): Hashizume, Tamotsu1
Ikeda, Eiji2
Akatsu, Yuji3
Ohno, Hideo4
Hasegawa, Hideki5
Issue Date: 31-May-1984
Publisher: 北海道大学
Journal Title: 北海道大學工學部研究報告
Journal Title(alt): Bulletin of the Faculty of Engineering, Hokkaido University
Volume: 121
Start Page: 23
End Page: 31
Type: bulletin (article)
URI: http://hdl.handle.net/2115/41875
Appears in Collections:北海道大学工学部研究報告 = Bulletin of the Faculty of Engineering, Hokkaido University > No.121

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