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北海道大学工学部研究報告 = Bulletin of the Faculty of Engineering, Hokkaido University >
No.124 >

分子線エピタキシャル法によるGaAs, InAsおよびGa_[x]In_[1-x]AsとGaAs/InAs歪入り超格子の成長

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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/41898

Title: 分子線エピタキシャル法によるGaAs, InAsおよびGa_[x]In_[1-x]AsとGaAs/InAs歪入り超格子の成長
Other Titles: Epitaxial Growth of GaAs, InAs, Ga_[x]In_[1-x]As and GaAs/InAs Strained Layer Superlattice by Molecular Beam Epitaxy
Authors: 勝見, 隆一1 Browse this author
大野, 英男2 Browse this author
高間, 俊彦3 Browse this author
長谷川, 英機4 Browse this author
Authors(alt): Katsumi, Ryuichi1
Ohno, Hideo2
Takama, Toshihiko3
Hasegawa, Hideki4
Issue Date: 31-Jan-1985
Publisher: 北海道大学
Journal Title: 北海道大學工學部研究報告
Journal Title(alt): Bulletin of the Faculty of Engineering, Hokkaido University
Volume: 124
Start Page: 37
End Page: 47
Type: bulletin (article)
URI: http://hdl.handle.net/2115/41898
Appears in Collections:北海道大学工学部研究報告 = Bulletin of the Faculty of Engineering, Hokkaido University > No.124

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