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No.124 >
分子線エピタキシャル法によるGaAs, InAsおよびGa_[x]In_[1-x]AsとGaAs/InAs歪入り超格子の成長
Title: | 分子線エピタキシャル法によるGaAs, InAsおよびGa_[x]In_[1-x]AsとGaAs/InAs歪入り超格子の成長 |
Other Titles: | Epitaxial Growth of GaAs, InAs, Ga_[x]In_[1-x]As and GaAs/InAs Strained Layer Superlattice by Molecular Beam Epitaxy |
Authors: | 勝見, 隆一1 Browse this author | 大野, 英男2 Browse this author | 高間, 俊彦3 Browse this author | 長谷川, 英機4 Browse this author |
Authors(alt): | Katsumi, Ryuichi1 | Ohno, Hideo2 | Takama, Toshihiko3 | Hasegawa, Hideki4 |
Issue Date: | 31-Jan-1985 |
Publisher: | 北海道大学 |
Journal Title: | 北海道大學工學部研究報告 |
Journal Title(alt): | Bulletin of the Faculty of Engineering, Hokkaido University |
Volume: | 124 |
Start Page: | 37 |
End Page: | 47 |
Type: | bulletin (article) |
URI: | http://hdl.handle.net/2115/41898 |
Appears in Collections: | 北海道大学工学部研究報告 = Bulletin of the Faculty of Engineering, Hokkaido University > No.124
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