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北海道大学工学部研究報告 = Bulletin of the Faculty of Engineering, Hokkaido University >
No.126 >

MBE成長によるGaAsおよびAlGaAs中の深い準位

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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/41929

Title: MBE成長によるGaAsおよびAlGaAs中の深い準位
Other Titles: Deep Levels in GaAs and AlGaAs Grown by MBE
Authors: 赤津, 祐史1 Browse this author
松本, 昌治2 Browse this author
大野, 英男3 Browse this author
長谷川, 英機4 Browse this author
Authors(alt): Akatsu, Yuji1
Matsumoto, Masaharu2
Ohno, Hideo3
Hasegawa, Hideki4
Issue Date: 31-May-1985
Publisher: 北海道大学
Journal Title: 北海道大學工學部研究報告
Journal Title(alt): Bulletin of the Faculty of Engineering, Hokkaido University
Volume: 126
Start Page: 59
End Page: 67
Type: bulletin (article)
URI: http://hdl.handle.net/2115/41929
Appears in Collections:北海道大学工学部研究報告 = Bulletin of the Faculty of Engineering, Hokkaido University > No.126

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